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Professor of Infrared Optical MaterialsDean of Faculty of Electrical Engineering and Computer Science, Ningbo UniversityDirector of NBU-NBIO Joint Research Center for Oceanic Infrared Information Technologies |
Prof. Xiang Shen received his B.E. and M.S. degrees from Ningbo University, Zhejiang, China, in 2002 and 2004, respectively, and the Ph.D. degree from Shanghai Institute of Technical Physics, Chinese Academy of Sciences in 2009. He was visiting fellow in Laser Physics Centre in The Australian National University from 2011 to 2012. Currently, Prof. Xiang Shen is Professor of Infrared Optical Materials of Ningbo University. He is serving as the Dean of Faculty of Electrical Engineering and Computer Science of Ningbo University, Director of NBU-NBIO Joint Research Center for Oceanic Infrared Information Technologies, and Head of Laboratory of Infrared Material and Devices. He was the recipient of Second Prize of The State Technological Invention Award (2014), the Second class of Ningbo Municipal Prize of Science & Technology (2019). He has also been selected by the Innovative Leading Expert of Zhejiang Ten-Thousands Talent Program (2021), the Leading Expert of Universities in Zhejiang Province (2020), the New-Century 151-Talent Program of Zhejiang Province (2018). His group is working on infrared chalcogenide glass and phase change materials. Prof. Xiang Shen has published over 300 refereed international journals papers, wrote 1 book chapter, and coauthored one text book.
Fragile-to-strong Kinetics Feature Assists PCRAM Performances
Current phase-change random access memory (PCRAM) could not meet the requirements of ideal neuro-inspired in-memory computing due to the poor thermal stability and/or low crystallization rate of conventional phase-change materials (PCM). For this purpose, we carried out the concept of fragile-to-strong (F-S) crystallization kinetics feature in PCM, which is good at to solve the contradiction between poor thermal stability and low crystallization rate. We first confirmed the F-S kinetics presents in several high performance PCM, and then discussed the mechanism of F-S kinetics in oxide doped nanocomposite Sb PCM. We also revealed the 2D confined structure can trigger F-S kinetics in ultrathin PCM. Above knowledges of F-S crystallization kinetics for PCM must be thought-provoking and a guidance in the field of PCRAM, which is the key cell for neuro-inspired in-memory computing.